2013/07/04 ver.3 page 1 spn2324 n-channel enhancement mode mosfet description applications the spn2324 is the n-channel logic enhancement mode power field effect transistor which is produced using super high cell density dmos trench technology. the spn2324 has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. ? powered system ? dc/dc converter ? load switch features pin configuration(sot-23) ? 100v/1a,r ds(on) = 310m ? @v gs = 10v ? high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23 package design part marking 24yw yw: date code
2013/07/04 ver.3 page 2 spn2324 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN2324S23RGB sot-23 24yw SPN2324S23RGB : tape reel ; pb ? free ; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 100 v gate ?source voltage v gss 30 v continuous drain current(t j =150 ) t a =25 i d 3.0 a t a =70 2.0 pulsed drain current i dm 10 a power dissipation t a =25 p d 1.25 w t a =70 0.8 operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 100 /w
2013/07/04 ver.3 page 3 spn2324 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 100 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1 1.5 2.5 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =80v,v gs =0v 1 ua v ds =80v,v gs =0v t j =125 5 on-state drain current i d(on) v ds 5v,v gs =10v 3.0 a drain-source on-resistance r ds(on) v gs = 10v,i d =3a 0.26 0.31 ? forward transconductance gfs v ds =10v,i d =3a 2.4 s diode forward voltage v sd i s =1a,v gs =0v 1.2 v dynamic total gate charge q g v ds =80v,v gs =10v i d = 5a 9 13 nc gate-source charge q gs 2 gate-drain charge q gd 1.4 input capacitance c iss v ds =25,v gs =0v f=1mhz 508 pf output capacitance c oss 29 reverse transfer capacitance c rss 16.5 turn-on time t d(on) v dd =50v,r l =10 ? i d =3a,v gen =10v r g =3.3 ? 2 ns t r 21.5 turn-off time t d(off) 11.2 t f 18.8
2013/07/04 ver.3 page 4 spn2324 n-channel enhancement mode mosfet typical characteristics output characteristics capacitance gate charge on-resistance vs. junction temperature
2013/07/04 ver.3 page 5 spn2324 n-channel enhancement mode mosfet typical characteristics source-drain diode forward voltage on-resistance vs. gate-source voltage normalized thermal transient impedance, junction to foot
2013/07/04 ver.3 page 6 spn2324 n-channel enhancement mode mosfet sot-23 package outline
2013/07/04 ver.3 page 7 spn2324 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan, 115, r.o.c phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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